太阳能离子注入机主要经济技术指标对比
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东莞帕萨（Simplant）
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瓦里安（Solion)
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离子种类
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B+,P+
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P+
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能量
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5-40keV
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10--20keV
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束流强度
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B+:70mA P+:120mA
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P+:80mA
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注入均匀性
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＞98%
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＞97%
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单机产能
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3000片/小时
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1000片/小时
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体积（长×宽×高）
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6×5×3米
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9.7×5.2×2.6米
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综合制程成本
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＄0.03/片
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＄0.1/片
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Key Technical Parameters
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DG plasma（Simplant）
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Varian（Solion)
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Species
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B+,P+
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P+
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Energy
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5-40keV
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10--20keV
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Current
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B+:70mA P+:120mA
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P+:80mA
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Uniformity
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＞98%
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＞97%
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Throughput
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3000wafer/hour
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1000 wafer/hour
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Dimension（length×width×height）
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6×5×3米
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9.7×5.2×2.6米
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Cost
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0.03USD/wafer
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0.1 USD/wafer
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太阳能电池片离子注入机的特点
离子注入与传统热扩散相比较，具有如下特点：
◆注入硅片的离子剂量可以精确控制。使用离子注入机掺杂，剂量可以精确到离子的个数，这样可以形成高品质的PN结，这是传统热扩散完全没能力做到的；
◆注入硅片的深度可以精确控制。离子注入机可以自由调节束能的大小，这可以调节离子的动能从而达到调节注入的深度。传统热扩散主要靠温度和时间来控制注入离子的深度，属于模糊控制；
◆高的光电转化率。离子注入机可以与传统热扩散相比可以提升电池1.5%-3%的光电转化率；
◆高均匀性：离子注入机由于可以控制束流的均匀性，对于硅片方块电阻的均匀性能够精确控制，使方阻均匀性更好。
Ion Implant Features
Compared with traditional thermal diffusion:
◆Dose of the ion implanted to the silicon wafer can be controlled accurately. Doping with ion implant, the dose can be accurate to the level of ions quantity, which can form high quality PN junction. Traditional thermal diffusion is not able to do.
◆Implanted depth can be controlled accurately. Ion implant could adjust the beam energy freely, which will adjust the kinetic energy of ion to regulate the implanted depth. Traditional thermal diffusion mainly depends on the temperature and the time to control the implanted depth which belongs to fuzzy control.
◆High efficiency of convert rate from photo to electric. Comparing with traditional thermal diffusion, ion implant can promote 1.5%-3% photoelectric conversion efficiency of cell.
◆High uniformity of square-resist. Cause the beam uniformity is adjustable and controlled precisely, the square-resist can be controlled better than thermal diffusion.
主要优势：
◆大束流：***大可以做到120mA（P+）以上。
◆B+和P+注入：相对市场上其他家的太阳能离子注入机目前只能注入P+离子，太阳能离子注入机也可以注入大束流的B+离子，满足不同客户的不同需求。
◆束流利用率：研发的太阳能离子注入机束流利用率可以达到95%。
◆束流均匀性：研发的太阳能离子注入机束流均匀度可以达到98%以上。
◆高产能：目前在市场上投入使用的太阳能离子注入机离子注入机的产能为1000片/小时左右（以Varian公司的Solion为例），这会对光伏电池生产线的产能造成很大的限制，直接影响电池片厂家的利润。研发的太阳能离子注入机设计产能将达到3000片/小时。
◆制程成本低廉：使用太阳能离子注入机，可以使离子注入机的综合制程成本控制在约RMB 0.3元/片。
Advantages of Simplant：
◆Large beam. Simplant can reach a maximum of above 120mA(P+).
◆B+ & P+ implant: Other ion implant manufacturers only can implant P+ ion, Simplant also can implant large beam B+ ion to satisfy different customer’s requirements.
◆Beam uniformity rate: Simplant’s beam utilization rate can reach 95%.
◆Beam uniformity: Simplant’s beam uniformity can reach above 98%.
◆High productivity. Currently, productivity of ion implant on the market is 1000 pieces per hour(take Varian’s Solion as an example),which will cause restriction to capacity of photovoltaic cell production line to affect the manufacturer's profit directly. Simplant's capacity can reach 3000 pieces per hour.
◆Low cost of process: Using Simplant, the comprehensive process cost can be controlled in about 2-3 cents per wafer.
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